Semiconductor joining substrate utilizing a tape with adhesive and copper-clad laminate sheet

ABSTRACT

The present invention relates to an adhesive-backed tape for semiconductors which is characterized in that it is composed of a laminate of an insulating film layer having the following characteristics (1) and (2) and at least one adhesive agent layer in the semi-cured state.
         (1) The coefficient of linear expansion in the film transverse direction (TD) at 50–200° C. is 17–30 ppm/° C.   (2) The tensile modulus of elasticity is 6–12 GPa       

     By means of this construction the present invention can provide, on an industrial basis, an adhesive-backed tape suitable for producing semiconductor devices, together with copper-clad laminates, semiconductor connecting substrates and semiconductor devices employing said tape, and it enables, the reliability of semiconductor devices for high density mounting to be enhanced.

TECHNICAL FIELD

The present invention relates to an adhesive-backed tape suitable forthe production of semiconductor devices where there is employed afilm-form adhesive agent, such as in the case of the patterned tape usedin tape automated bonding (TAB), the semiconductor connecting substratesuch as an interposer used for a ball grid array (BGA) package, diebonding materials, lead frame fixing tape, LOC tape, the interlayeradhesive sheets of a multilayer substrate and the like, employed whenmounting semiconductor integrated circuits; and to a copper-cladlaminate, semiconductor connecting substrate and semiconductor deviceemploying same.

PRIOR-ART

Conventional semiconductor integrated circuit (IC) mounting techniquescomprise the following.

In the mounting of ICs, methods employing lead frames made of metal aremost often used but, recently, there has been an increase in methodsemploying a connecting substrate where the conductor pattern for ICconnection is formed on an organic insulating film such as a glass epoxyor polyimide. A typical example is the tape carrier package (TCP) basedon the tape automated bonding (TAB) method.

In producing the TCP connecting substrate (the patterned tape), thereis, generally used an adhesive-backed tape for TAB (hereinafter this isreferred to as the tape for TAB use). Normally, the tape for TAB use hasa three-layer construction comprising an uncured adhesive agent layerand a polyester film with release properties which serves as aprotective film, provided on a flexible organic insulating film.

The tape for TAB use is processed into TAB tape (the patterned tape),which is the connecting substrate, via processing stages such as (1)providing sprocket and device holes, (2) hot lamination of copper foiland hot curing of the adhesive agent, (3) pattern formation (applicationof a resist, etching and removal of the resist), and (4) a tin orgold-plating treatment, etc. FIG. 1 shows the form of the patternedtape. On organic insulating film 1 are the adhesive agent 2 and theconductor pattern 5, and there are provided sprocket holes 3 for feedingthe film and device holes 4 in which the devices are set. FIG. 2 showsin cross-section one embodiment of a TCP type semiconductor device. Byhot pressure bonding (inner lead bonding) of the inner lead portions 6of the patterned tape to the gold bumps 10 of semiconductor integratedcircuit 8, the semiconductor integrated circuit is attached. Next, thesemiconductor device is produced via a resin sealing process based onsealing resin 9. Finally, other components are connected to the attachedintegrated circuit, etc, via outer lead 7, and the TCP typesemiconductor device mounted on electronic equipment.

On the other hand, along with the miniaturization and weight reductionof electronic equipment in recent years, for the purposes of stillhigher density mounting of semiconductor packages, there have been usedBGAs (ball grid arrays) or CSPs (chip scale packages) where theconnection terminals are arranged on the package underside. In the sameway as a TCP, a connecting substrate known as an interposer is essentialin a BGA or CSP. However, they differ in terms of the IC connectionmethod in that, with a conventional TCP the TAB system of gang bondingpredominates, whereas with a BGA or CSP either a TAB system or a wirebonding system is selected according to the individual packagespecifications, the application or the design goals, etc. FIG. 3 andFIG. 4 show cross-sections of embodiments of such semiconductor devices(BGA or CSP repectively). In the figures, 12 and 20 denote the organicinsulating film, 13 and 21 the adhesive agent, 14 and 22 the conductorpattern, 15 and 23 the semiconductor integrated circuit, 16 and 24 thesealing resin, 17 and 25 gold bumps, 18 and 26 solder balls, 19 areinforcing board, and 27 a solder resist.

The interposer referred to here has the same kind of function as theaforesaid TCP patterned tape, so it is possible to employ theadhesive-backed tape used for TAB. This will of course be useful inconnection systems having an inner lead, but it is particularlyapplicable in a process where copper foil is laminated following themechanical punching of holes for solder balls and device holes for ICs.On the other hand, for connection by wire bonding, an inner lead is not,necessary, and in the process of introducing holes for solder balls andIC device holes along with the copper foil, there may be used a copperclad laminate where the lamination of the copper foil and hot curing ofthe adhesive have already been carried out.

In the most advanced area array type packages such as those of the CSPand BGA type, there is a considerable demand for still higher mountingdensities, and so there is an increasingly narrow pitch of the solderballs which serve as the external terminals. For example, there is areduction in the solder ball pitch from the conventional 1.27 mm to 1.00mm, and a reduction in the via hole diameter from 1 mm to 0.5 mm. Alongwith this, in the case of the insulating film such as polyimide whichconstitutes the base film, at the conventional thickness of 75 μmdifficulties are frequently brought about in the punching process andthere is a considerable demand to move to a 50 μm thickness.

However, when the thickness is less than 75 μm, there arises the problemof a lowering of stiffness and a tendency for warping to occur at thetime of the cladding with copper foil. In addition, in terms offacilitating ultrafine-processing, there is also a tendency towardsthinner copper foil, and rather than the conventional thickness of 35μm, currently copper foil of thickness, 18 μm or 15 μm has become themainstream, but this too is a factor in the occurrence of the problem ofwarping.

Thus, in the case of a conventional adhesive-backed tape, there has beeninvestigated a method for eliminating warping by introducing a siloxanestructure into the adhesive agent and providing flexibility (U.S. Pat.No. 5,180,627).

However, all attempts at reducing warping based on improving theadhesive agent, including this particular method, have hitherto beenunable to provide an adequate effect and they have been difficult to putinto practice. This is because, while there is a certain degree ofeffectiveness in cases where the residual percentage copper foil afterforming the circuit pattern is small, in cases where the residualpercentage copper foil is large no warping reduction effect is to beseen in the copper foil laminated or post-cured states. In other words,the warping varies according to the residual percentage of copper foil.

For the processed tape manufacturer, it is preferred that there be nowarping in the stages described above, and a reduction in warping isdesirable both in the copper-foil-laminated state and in the statefollowing the formation of the circuit pattern. It has not been possibleby the prior art to meet such demands and simultaneously achieve both areduction in warping in the copper-foil-laminated state and in the statefollowing the formation of the circuit pattern.

The objective of the present invention lies in resolving such problemsby improving the properties of the insulating film, such as thepolyimide, which constitutes the base, film, and to offer anadhesive-backed tape for semiconductors which has outstandingdimensional stability and enables there to be simultaneously achievedboth a reduction in warping in the copper-foil-laminated state and inthe state following the formation of the circuit pattern; together witha copper clad laminate, a semiconductor connecting substrate and asemiconductor device employing said adhesive-backed tape.

Furthermore, in the case of IC connection by the wire bonding method,there is a demand for the adhesive agent to maintain a high elasticmodulus at bonding temperatures of 110–200° C. If the elastic modulus ofthe adhesive agent is raised for this purpose, problems then arise suchas splitting of the adhesive agent in the punching process. Thus, afurther objective of the present invention is an adhesive-backed tapefor semiconductors which provides both good punchability and retentionof adhesive agent modulus of elasticity at high temperatures.

DISCLOSURE OF THE INVENTION

The present invention relates to an adhesive-backed tape forsemiconductors which is characterized in that it is composed of alaminate of an insulating film layer having the followingcharacteristics (1) and (2), and at least one adhesive agent layer inthe semi-cured state.

-   -   (1) The coefficient of linear expansion of the film in the        transverse direction (TD) at 50–200° C. is 17–30 ppm/° C.    -   (2) The tensile modulus of elasticity is 6–12 GPa

BRIEF EXPLANATION OF THE DRAWINGS

FIG. 1 shows a perspective view of an embodiment of the semiconductorconnecting substrate (patterned tape) prior to the mounting of thesemiconductor integrated circuits, which is obtained by processing theadhesive-backed tape for semiconductor devices of the present invention.

FIG. 2 shows, a cross-sectional view of an embodiment of a semiconductordevice (TCP) using the adhesive-backed tape for semiconductor devices ofthe present invention.

FIG. 3 shows a cross-sectional view of an embodiment of a semiconductordevice (BGA) using the adhesive-backed tape for semiconductor devices ofthe present invention.

FIG. 4 shows a cross-sectional view of an embodiment of a semiconductordevice (CSP) using the adhesive-backed tape for semiconductor devices ofthe present invention.

EXPLANATION OF THE NUMERICAL CODES

1, 12, 20 insulating film 2, 13, 21 adhesive agent 3 sprocket holes 4device holes 5, 14, 22 conductor for semiconductor integrated circuitconnection 6 inner lead portion 7 outer lead portion 8, 15, 23semiconductor integrated circuits 9, 16, 24 sealing resin 10, 17, 25 gold bumps 11  protective film 18, 26 solder balls 19  reinforcing board27  solder resistOptimum Form for Practising the Invention

As examples of the insulating film used in the present invention, thereare plastics such as polyimides, polyesters, polyphenylene sulphide,polyether sulphones, polyetherether ketones, aramids, polycarbonates,polyarylates and liquid crystal polymers, and also films which comprisea composite material such as a glass cloth impregnated with an epoxyresin. There may also be used a laminate of a plurality of these films.Amongst such examples, films in which the chief component is a polyimideresin are outstanding in their mechanical, electrical, heat resistanceand chemical properties, etc, and provide a good balance too in terms ofcost, so are favourably employed. Optionally, the insulating film can besubjected to a surface treatment by, for example, a hydrolysis, coronadischarge, low temperature plasma, physical roughening oradhesion-enhancing coating treatment, on one or both faces.

The thickness of the insulating film is preferably 10–65 μm and morepreferably 25–55 μm. If it is less than 10 μm, the mechanical strengthis low and the usability in the patterning and subsequent stages isimpaired, so this is undesirable. If it is more than 65 μm, it isdifficult to reduce the size of solder balls and via holes, so this isundesirable.

The transverse direction (TD) coefficient of linear expansion of thefilm is preferably greater than the coefficient of linear expansion ofthe clad metal foil. The coefficient of linear expansion at 50–200° C.is preferably 17–30 ppm/° C. and more preferably 19–25 ppm/° C. in thecase where the metal foil is an electrolytic copper foil. If it is lessthan 17 ppm/° C. or more than 30 ppm/° C., then there is considerablewarping in the copper-foil-laminated state, which is undesirable.

The tensile modulus of elasticity in the present invention is the valueat 25° C. defined by ASTM-D882. The tensile modulus of elasticity ispreferably 6–12 GPa, and more preferably 7–10 GPa. If it is less than 6GPa, then the mechanical strength is low and the usability in thepatterning and subsequent stages is impaired, which is undesirable. Ifit is higher than 12 GPa, then the flexibility is lowered which isundesirable.

With regard to the coefficients of linear expansion of the insulatingfilm layer of the present invention in the film machine direction (MD)and transverse direction (TD), the difference between these coefficientsof linear expansion is preferably 3–10 ppm/° C., and more preferably 5–7ppm/° C. If the difference is less than 3 ppm/° C. or more than 10 ppm/°C., then in both cases there is considerable warping in thecopper-foil-laminated state, which is undesirable. Again, in terms ofachieving a good balance between the elongation due to tension in the MDdirection at the time of continuous lamination and the elongation due toheat in the TD direction, it is preferred that the value in the MD besmaller than that in the TD. Reference here to the coefficient of linearexpansion is the value measured by the TMA tensile loading method, andspecifically it is the value given by evaluation method (2) of theexamples.

The percentage heat shrinkage of the insulating film layer at 200° C. inthe film transverse direction (TD) is preferably 0.0 to 0.2%, and morepreferably 0.0 to 0.1%. The percentage heat shrinkage influences thewarping in the copper-foil-laminated state in the same way as thecoefficient of linear expansion, and if it is less than 0.0% or morethan 0.2% then in each case there is considerable warping in thecopper-foil-laminated state, which is undesirable. Reference here to thepercentage heat shrinkage means the value measured by a method based onASTM D1204, and is the value determined by the method given inevaluation method (3) of the examples.

The humidity coefficient of expansion of the insulating film layer inthe film transverse direction (TD) is preferably no more than 23 ppm/%RH. More preferably, it is 5 to 20 ppm/% RH and still more preferably 5to 15 ppm/% RH. In the same way as the coefficient of linear expansion,the humidity coefficient of expansion affects the warping in thecopper-foil-laminated state and if the value exceeds 23 ppm/% RH thenthere is considerable warping in the copper-foil-laminated state, whichis undesirable. The precise measurement conditions for the humiditycoefficient of expansion are given in evaluation method (4) of theexamples.

The water absorption of the insulating film layer is preferably no morethan 1.7% and more preferably no more than 1.5%. If the percentage waterabsorption exceeds 1.7%, the amount of moisture vaporized by the heat ofsoldering at the time of the semiconductor device mounting isconsiderable so, for example, separation occurs between structuralcomponents of the TAB tape, and the soldering heat resistance is poor.The water absorption measurement conditions are given in evaluationmethod (5) of the examples.

The thermal conductivity of the insulating film layer is preferably nomore than 0.40 W/m.K, and more preferably no more than 0.30 W/m.K. Ifthe thermal conductivity exceeds 0.40 W/m.K, then the heat of solderingis transmitted to the insulating film layer and adhesive agent layer, sothat moisture contained in the insulating film layer and in the adhesiveagent layer is readily vaporized and caused to expand. As a result,separation occurs between the structural components of the TAB tape andthere is poor solder heat resistance. The conditions for measuring thethermal conductivity are given in evaluation method (6) of the examples.

The water vapour transmission of the insulating film layer is preferablyat least 0.04 g/m²/24 hr. If the water vapour transmission is less than0.04 g/m²/24 hr, then moisture absorbed by the substrate does not escapewhen heating at the time of soldering, and there is explosivevaporization and expansion, so that separation of the structuralcomponents occurs. The conditions for measurement of the water vapourtransmission are given in evaluation method (7) of the examples.

The adhesive agent layer is normally provided in a semi-cured state andits chemical structure is not particularly restricted providing that,following copper foil laminating, curing and crosslinking can beeffected by the application of at least one type of energy selected fromheat, pressure, an electric field, a magnetic field, ultraviolet light,radiation, ultrasonics or the like. In particular, it is preferred thatit contain at least one type of thermosetting resin selected from epoxyresins, phenolic resins, polyimide resins and maleimide resins. Theamount of thermosetting resin added is preferably 2 to 20 wt % of theadhesive agent layer and more preferably 4 to 15 wt %. The thickness ofthe adhesive agent layer prior to curing is preferably in the range 3 to50 μm.

The epoxy resins are not especially restricted, providing that theypossess two or more epoxy groups per molecule, and examples include thediglycidyl ethers of bisphenol F, bisphenol A, bisphenol S,dihydroxy-naphthalene, dicyclopentadiene diphenol, dicyclopentadienedixylenol and the like, epoxidized phenolic novolaks, epoxidized cresolnovolaks, epoxidized trisphenylol methane, epoxidized tetraphenylolethane, epoxidized m-xylenediamine, cyclic epoxies and the like.

As phenolic resins, there can be used any known phenolic resin such asnovolak type phenolic resins or resol type phenolic resins. For example,there are resins comprising phenol, alkyl-substituted phenols such ascresol, p-tert-butylphenol, nonylphenol and p-phenylphenol, terpene,dicyclopentadiene and other such cyclic alkyl-modified phenols, thosewith a functional group containing a heteroatom such as a nitro group,halogen group, cyano group, amino group or the like, those with anaphthalene, anthracene or similar skeletal structure, andpolyfunctional phenols such as bisphenol F, bisphenol A, bisphenol S,resorcinol and pyrogallol.

As examples of polyimide resins, there are those obtained by theimidation of polyamic acids obtained by the polycondensation of thedianhydride of an aromatic tetracarboxylic acid such as pyromelliticacid, 3,3′,4,4′-biphenyltetracarboxylic acid or3,3′,4,4′-benzophenonetetracarboxylic acid, and a diamine such as4,4′-diaminodiphenylether, 4,4-diaminodiphenyl-sulphone,p-phenylenediamine, dimethylbenzidine or 3,3′-diaminobenzophenone.

As maleimide resins, those which are at least difunctional arepreferred, such as N,N′-(4,4′-diphenylmethane)bismaleimide,N,N′-p-phenylenebis-maleimide, N,N′-m-phenylenebismaleimide,N,N′-2,4-tolylenebismaleimide, N,N′-2,6-tolylenebismaleimide,N,N′-ethylenebismaleimide, N,N′-hexamethylenebis-maleimide and the like.

There are no particular restrictions on the addition of thermosettingresin curing agents and curing accelerators to the adhesive agent layerof the present invention. For example, there can be used known materialssuch as diethylenetriamine, triethylene-tetramine or other suchaliphatic polyamines, aromatic polyamines, boron trifluoridetriethylamine complex or other such boron trifluoride amine complexes,2-alkyl-4-methylimidazole, 2-phenyl-4-alkylimidazole or other suchimidazole derivative, phthalic anhydride, trimellitic anhydride or othersuch organic acid, dicyandiamide, triphenylphosphine,diazabicycloundecene or the like. The amount added is preferably from0.1 to 10 parts by weight per 100 parts by weight of the adhesive agentlayer.

As well as the above components, there are no restrictions on theaddition of antioxidants, ion arrestors or other such organic orinorganic components within a range such that the properties of theadhesive agent are not impaired.

The adhesive agent layer of the present invention can containthermoplastic resins. Thermoplastic resins are effective for controllingthe softening temperature, and have the function of enhancing adhesivestrength, flexibility, thermal stress mitigation, and insulation basedon lower moisture absorption. The amount of thermoplastic resin added ispreferably 30–60 wt %, and more preferably 35–55 wt %, of the adhesiveagent layer.

Examples of thermoplastic resins are acrylonitrile-butadiene copolymer(NBR), acrylonitrile-butadiene rubber-styrene resin (ABS),styrene-butadiene-ethylene resin (SEBS), acrylics, polyvinyl butyral,polyamides, polyesteramides, polyesters, polyimides, polyamide-imides,polyurethanes and the like. Furthermore, these thermoplastic resins mayalso possess functional groups capable of reacting with the aforesaidphenolic resins, epoxy resins or other thermosetting resins. Specificexamples of these groups are amino groups, carboxyl groups, epoxygroups, hydroxyl groups, methylol groups, isocyanate groups, vinylgroups, silanol groups and the like. By means of these functionalgroups, there is firm bonding to the thermosetting resin and the heatresistance is thereby raised, so this is preferred. Amongst thethermoplastic resins, polyamide resins are preferred in terms ofadhesion to the copper foil, flexibility and insulation properties, andvarious kinds of polyamide resin can be used. Polyamide resinscontaining, as an essential component, dicarboxylic acid with 36 carbons(so-called dimer acid) are particularly suitable for conferringflexibility on the adhesive agent layer and, because of low moistureabsorption, they are outstanding in their insulation properties.Furthermore, polyamide resins which are polyamide resins of amine valueat least 1 but less than 3 are favourably employed. Polyamide resinscontaining dimer acid are obtained by the polycondensation of a diamineand dimer acid by the usual methods, and in such circumstances, as wellas the dimer acid, there may also be included dicarboxylic acid such asadipic acid, azelaic acid or sebacic acid as a copolymer component.Known diamines such as ethylenediamine, hexamethylenediamine orpiperazine can be used, and two or more types may be mixed together fromthe point of view of moisture absorption, solubility or the like.

In the present invention the acid value of the polyamide resin iscalculated from the titre using potassium hydroxide. That is to say, 5 gof the polyamide is weighed out and dissolved in 50 ml of a 2:1 solventmixture of toluene and n-butanol. A few drops of phenolphthalein areadded as an indicator and then titration performed using a 0.1 Npotassium hydroxide solution in methyl alcohol. The acid value iscalculated using the following formula (1) from the amount of potassiumhydroxide employed for the titration.Av=(56.1×0.1×F×(A−B))/50  (1)

Av: acid value, F: strength*¹ of the potassium hydroxide, A: amount ofpotassium hydroxide solution required for the titration (ml), B: amountcorresponding to A in a blank test (ml)

Here, the strength of the potassium hydroxide is calculated from thefollowing formula (2) by potassium hydrogen phthalate titration.F=1000×0.5/(204.22×(V−b)×0.1)  (2)

V: amount of potassium hydroxide solution required in the titration(ml), b: amount corresponding to V in a blank test (ml)

An adhesive agent composed only using polyamide resin of acid value lessthan 3 is inferior in its punchability. In the present invention, it ispreferred that there be at least 3 wt % of polyamide resin of acid valueat least 3 in terms of the adhesive agent layer as a whole. Thiscontributes to the punchability.

In the present invention, it is preferred that the proportion ofpolyamide resin contained in the adhesive agent layer lies in the range1 to 90 wt %. If the amount is less than 1 wt %, problems are producedin terms of pliability, and there is a fear that the adhesive agentlayer will separate away. With more than 90 wt %, the insulationproperties are impaired, so the reliability is reduced. It is furtherpreferred that the amount lies in the range 20–70 wt %.

Following curing, the elastic modulus at 150° C. of the adhesive agentlayer in the film transverse direction (TD) is preferably from 1 MPa to5 GPa, more preferably from 2 MPa to 1 GPa, and still more preferablyfrom 50 MPa to 1 GPa, and furthermore, the coefficient of linearexpansion at 25–150° C. in the film transverse direction (TD) ispreferably in the range 10–500 ppm/° C. and more preferably 20–300° C.Here, reference to the elastic modulus denotes the value E′ (the storageelastic modulus) determined by a dynamic visco-elasticity method, andthe measurement conditions are given in evaluation method (8) of theexamples. If the elastic modulus is less than 1 MPa, then there is alowering of the heat resistance at the time of reflow, which isundesirable. If the elastic modulus is greater than 5 GPa, as well asthere being insufficient flexibility, there is considerable warpingfollowing the circuit pattern formation, which is undesirable.

Now, a high elastic modulus at high temperature is, more important in asemiconductor connecting substrate for wire bonding applications.Specifically, wire bonding temperatures are generally from 110° C. to200° C. and taking, as a typical value, the elastic modulus (E′determined by the dynamic viscoelasticity method) at 150° C. as anindex, this should appropriately lie in the range given above.

Again, the elastic modulus at 25° C. of the adhesive agent layer in thefilm transverse direction (TD) after curing preferably lies in the range10 MPa to 5 GPa, and more preferably in the range 100 MPa to 3 GPa. Ifthe elastic modulus is less than 10 MPa, then punching faults arise andthe punchability is reduced, so this is undesirable. If the elasticmodulus is greater than 5 GPa, then the adhesive strength to the copperfoil is reduced, which is undesirable.

Furthermore, it is preferable that the coefficient of linear expansionin the film transverse direction (TD) at 25–150° C. lies in the range10–500 ppm/° C. and more preferably in the range 20–300 ppm/° C. If thecoefficient of linear expansion is less than 10 ppm/° C., or greaterthan 500 ppm/° C., then warping is increased which is undesirable. Themethod of measuring the coefficient of linear expansion is given inevaluation method (9) of the examples.

Again, the haze value of the adhesive agent layer is preferably no morethan 20. If the haze is more than 20, then the wire bonding propertiesare poor. Here haze refers to the cloudiness and is specified in JISK7105, but the details are given in evaluation method (10) of theexamples.

The adhesive-backed tape for semiconductor devices of the presentinvention may have a protective film layer. The protective film layer isnot particularly restricted providing that it can be peeled away fromthe adhesive agent surface prior to the hot lamination of the copperfoil without adversely affecting the form of the adhesive-backed tape.However, as examples, there are silicone- or fluorocompound-coatedpolyester film or polyolefin film, or paper to which these have beenlaminated.

Next, the method of producing a copper-clad laminate, a semiconductorconnecting substrate and a semiconductor device using theadhesive-backed tape of the present invention will be exemplified.

(1) Example of a Method for Producing the Adhesive-Backed Tape

A coating material comprising an aforesaid adhesive agent compositiondissolved in a solvent is applied onto an insulating film such as apolyimide which meets the requirements of the present invention, andthen dried. It is preferred that the application be carried out so thatthere is formed an adhesive agent layer film thickness of 5 to 125 μm.The drying conditions are preferably 1 to 5 minutes at 100–200° C. Thesolvent is not particularly restricted but a solvent mixture of anaromatic such as toluene or xylene and an alcohol such as methanol orethanol is favourably employed.

In the case where an epoxy resin and a polyamide resin are mixedtogether, the compatibility is generally poor and the haze value of theadhesive agent is raised. In the present invention, when an epoxy resinand polyamide resin are dissolved in a solvent, it is possible toimprove the compatibility and reduce the haze to no more than 20 bystirring in the solvent for 2–4 hours at 60–70° C. prior to employingother components, so that there is partial prior reaction between saidepoxy resin and polyamide resin.

A protective film is laminated to the film obtained in this way, andthen finally the film is slit to a specified width and theadhesive-backed tape obtained.

Furthermore, by coating a solution of the adhesive agent compositiononto a protective film such as polyester film which has been providedwith release properties, and then drying, after which this is slit tothe specified width of 29.7–60.6 mm, and the adhesive-backed tape thusobtained then hot roll laminated under conditions comprising 100–160°C., 10 N/cm and 5 m/min, to the centre of an insulating film ofspecified width 35–70 mm, this may also be employed as adhesive-backedtape for TAB use.

(2) An Example of the Method for Producing a Copper-Clad Laminate

3–35 μm electrolytic or rolled copper foil is laminated to theadhesive-backed tape sample from (1) under conditions comprising110–180° C., 30 N/cm and 1 m/min. Where required, a stepwise hot curingtreatment is carried out for 1 to 24 hours at 80–300° C. in an air ovenand the copper-clad laminate produced. In such circumstances, deviceholes and solder ball holes may be introduced into the adhesive-backedtape sample prior to the copper-foil cladding.

(3) An Example of the Method for Producing a Semiconductor ConnectingSubstrate

In the normal way, a photoresist film is formed on the copper foilsurface of the copper-clad laminate obtained in (2), and then etching,removal of the resist, electrolytic gold plating and solder resist filmformation carried out, and a semiconductor connecting substrate(patterned tape) produced (FIG. 1).

(4) An Example of the Method for Producing a Semiconductor Device

First of all, an integrated circuit (IC) is connected onto the patternedtape from (3) using an epoxy type die-bond material. Furthermore, diebonding is carried out for 3 seconds at 110–250° C. on the reverse faceand, optionally, the die-bond material is cured. Next, under conditionscomprising 110–200° C. and 60–110 kHz, wirebonding connection iseffected. Finally, by sealing based on an epoxy sealing resin and solderball connection stages, an FP-BGA type semiconductor device is obtained(FIG. 2). As the die-bond material, there may also be used adhesive tapewith 10–100 μm adhesive agent layers on both faces of an insulating filmsuch as polyimide which satisfies the requirements of the presentinvention. In such circumstances, the press bonding onto the patternedtape and the IC press bonding are preferably carried out for about 0.5to 5 seconds at 80–200° C. Again, following the press bonding, whererequired a stepwise hot curing treatment may be carried out for 1–24hours at 80–300° C., and the adhesive agent cured.

Below, the present invention is explained by providing practicalexamples but the invention is not to be restricted to these examples.Prior to embarking on the explanation of the examples, the methods ofevaluation will first be described.

(1) Tensile Modulus of Elasticity

This was measured based on ASTM-D882.

(2) Coefficient of Linear Expansion

A test-piece, which had been heated for 30 minutes at 300° C. in a statepermitting free shrinkage, was fitted to a TMA device, and thedimensional change in the test-piece over the range 50–200° C. read offunder conditions of 2 g load and 20° C./min rate of temperature rise,after which calculation was carried out using the following formula.linear expansion coefficient (1/° C.)=(L ₁ −L ₀)/L ₀(200−50)

-   -   L₀: length of test-piece at 50° C. (mm)    -   L₁: length of test-piece at 200° C. (mm)        (3) Percentage Heat Shrinkage

This was calculated by the following formula.percentage heat shrinkage (%)=(L ₁ −L ₂)×100/L ₁

-   -   L₁: length between marks prior to heating (mm)    -   L₂: length between marks after heating (mm)        (4) Humidity Coefficient of Expansion

The dimensional change in a test-piece over the range 5–60% RH, measuredat a temperature of 23° C. with a 5 g loading, was determined andcalculation carried out using the following formula.Humidity coefficient of expansion (1/% RH)=(L ₁ −L ₀)/L ₀(60−5)

-   -   L₀: length of test-piece at 5% RH (mm)    -   L₁: length of test-piece at 60% RH (mm)        (5) Water Absorption

The insulating film layer was immersed in water at 23° C. for 24 hours,and the change in weight of the insulating film layer before and afterimmersion measured, and then calculation carried out using the followingformula.water absorption (%)=(weight after immersion−weight beforeimmersion)/weight before immersion(6) Thermal Conductivity

The calculation of the thermal conductivity was carried out using thefollowing formula.thermal conductivity (W/m.K)=heat diffusivity (m ² /s)×heat capacity(J/m ³ K)

The heat diffusivity was measured by cutting out a disc-shaped sample ofdiameter about 10 mm and thickness 50 μm, then coating both faces bysputtering platinum, after which both faces were given about a 1 μmcoating with a carbon spray to blacken the faces, and then measurementcarried out by the laser flash method at 150° C.

The heat capacity was calculated from the product of the density and thespecific heat. The density was measured by the Archimedes method at 23°C. The specific heat was measured by DSC (Differential ScanningCalorimetry) at a rate of temperature rise of 10° C./min, and there wasemployed the specific heat measured at 150° C.

(7) Water Vapour Transmittance

This was measured based on ASTM-D50 under conditions of 38° C./90% RHfor 24 hours.

(8) Elastic Modulus of the Adhesive Agent

Layers of adhesive agent were superimposed to give a thickness of about200 μm, and then a sequential curing treatment carried out for 4 hoursat 80° C., 5 hours at 100° C. and 4 hours at 160° C. in an air oven, anda cured film of the adhesive obtained. Using a dynamic viscoelasticitymethod, the change in E′ (storage elastic modulus) with temperature wasmeasured. The measurement conditions were as follows.

-   -   frequency=110 Hz    -   rate of temperature rise=3° C./min        (9) Coefficient of Linear Expansion of the Adhesive Agent

A film of cured adhesive agent was prepared in the same way as in (8)and used as the test-piece. This was fitted to a TMA device and thedimensional change in the test-piece over the range 25–150° C. read-offunder conditions of 2 g loading and 20° C./min rate of temperature rise,after which calculation was performed using the following formula.linear expansion coefficient (1/° C.)=(L ₁ −L ₀)/L ₀(150−25)

-   -   L₀: length of test-piece at 25° C. (mm)    -   L₁: length of test-piece at 150° C. (mm)        (10) Adhesive Agent Haze

There was used as the measurement sample an adhesive agent sheetcomprising a PET film of thickness 25 μm on which had been coated a 12μm adhesive agent layer. Furthermore, as a reference sample, there wasused the uncoated PET film (25 μm). In accordance with JIS-K7105, usingan integrating sphere type luminous transmission measurement device, thediffuse transmittance and the total luminous transmittance weremeasured. The haze (ratio of diffuse transmittance to total luminoustransmittance) for the reference sample was determined and taken as 0(standard). Next, the diffuse transmittance and total luminoustransmittance of the adhesive sheet were measured, and the haze for justthe adhesive agent layer alone determined.

(11) Production of the Semiconductor Connecting Substrate (PatternedTape) for Evaluation

18 μm of electrolytic copper foil (FQ-VLP foil made by the Mitsui Miningand Smelting Co.) was laminated to the adhesive-backed tape underconditions of 140° C., 10 N/cm and 1 m/min, and, then a sequential hotcuring treatment carried out in an air oven for 4 hours at 80° C., 5hours at 100° C. and 4 hours at 160° C., to give a copper-foil-laminatedadhesive-backed tape.

Furthermore, in the normal way, photoresist film formation, etching,removal of the resist, electrolytic gold plating and solder resist filmformation were carried out, to prepare a semiconductor connectingsubstrate (patterned tape) having a 3 μm thickness of plated nickel anda 1 μm thickness of plated gold (FIG. 1).

(12) Production of the Semiconductor Device

A 20 mm square IC was press bonded onto the patterned tape prepared in(11) using an epoxy die-bonding material (“LE-5000” produced byLintech), and then hot curing carried out for 30 minutes at 160° C. inthis state. Next, after wire bonding the IC and circuit board with goldwire under conditions of 150° C. and 110 kHz, resin sealing wasperformed. Finally, the solder balls were attached by reflow and thesemiconductor device used for evaluation obtained.

(13) Preparation of the Sample used for the Copper-Foil-LaminationWarping Evaluation and the Warping Evaluation Method

18 μm electrolytic copper foil was laminated to the adhesive-backed tapeunder conditions of 140° C., 30 N/cm and 1 m/min. Next, the sample wascut to a width of 35 mm×200 mm and a sequential curing treatment carriedout in an air oven for 4 hours at 80° C., 5 hours at 100° C. and 4 hoursat 160° C., and the sample used for evaluation of the warping obtained.The measurement of warping was carried out after conditioning for 24hours at 23° C. and 55% RH based on SEMI-G76-0299. With one edge of thesample pressed down, using vernier callipers the height on the otherside of an upwardly warping sample was measured and this was taken asthe amount of warping (where the copper foil curved upwards, this wastaken as plus).

(14) Method of Evaluating Warping in the State with a Circuit PatternFormed

In the normal way, the copper foil side of the warping evaluation sampleproduced in (13) was subjected to photoresist film formation, etching,resist elimination and electrolytic gold plating, and an evaluationsample produced. When the area of the adhesive was taken as 100, thearea of the conductor regions (the residual fraction) was 30. Themeasurement of the warping was carried out in the same way as in (13).

(15) Method of Evaluating the Percentage Dimensional Change

Sprocket holes and device holes were introduced into the adhesive-backedtape. Two arbitrary points A and B were taken on this tape and thedistance between them measured (L₀). Next, patterned tape was producedby the procedure in (11) and the distance (L) between A and B measured.The percentage dimensional change was determined from the followingformula. Percentage dimensional change={(L₀−L)/L₀}×100

(16) Wire Bonding Property (WB Property, Pull Strength)

Under conditions of 135° C. and 0.1 MPa, 18 μm electrolytic copper foilwas laminated to the adhesive-backed tape used for semiconductordevices. Next, sequential heat treatment was carried out in an air ovenfor 3 hours at 80° C., 5 hours at 100° C. and 5 hours at 150° C., andthere was produced a copper-foil-laminated adhesive agent sheet forsemiconductor devices. A 2 mm wide protective tape was affixed to thecopper foil face of the copper-foil-laminated adhesive agent sheetobtained, then etching and removal of the protective tape performed,after which nickel plating was carried out at a thickness of 1 μm, andthen electrolytic gold plating carried out at a thickness of 0.5 μm.Bonding of gold wire to the sample produced was carried out under thefollowing conditions.

gold wire diameter 25 μm ultrasonic frequency 110 KHz bondingtemperature 150° C.

Subsequently, using a push-pull gauge, the pull strength between thegold wire and the sample was measured. The higher the pull strength thebetter but if it is less than 7 g then, in the temperature cycle test,wire break faults will readily occur, so it is ideally greater than 7 g.

(17) Punchability

Using a metal die, a round hole (0.3 mm diameter) was introduced fromthe protective film side into a sample of the adhesive agent sheet witha protective film/adhesive agent layer/organic insulating filmstructure. Next, after the protective film had been removed, thecondition of the adhesive agent layer at the hole circumference wasobserved. Where there were splits or gaps in adhesive agent layer, orwhere there was separation from the organic insulating film, thepunchability was regarded as poor.

(18) Solder Heat Resistance (Reflow Resistance)

Five semiconductor devices for evaluation prepared in (12) wereconditioned for 12 hours at 85° C./85% RH, after which heat treatmentwas carried out in an IR reflow oven at a maximum temperature of 240° C.A check was made for the number of occurrences of package bulging.

Below, the present invention is explained by providing examples but theinvention is not to be restricted to these examples. With regard to thepolyamide resins and polyimide base film used in these examples, besidesthe commercial materials, materials were also prepared by the methodsexemplified below.

REFERENCE EXAMPLE 1 Synthesis of Polyamide Resins

Using dimer acid (“Pripol 1009”, produced by Uniqema) and adipic acid asthe acid component, and using hexamethylenediamine as the aminecomponent, polyamide reaction product were prepared by adding togethermixtures of these acids/amine, antifoaming agent and up to 1% phosphoricacid catalyst. These were subjected to thermal polymerization at 205° C.and, following standard procedure, antioxidant then added, after whichthe polyamide resin was removed. The four types of polyamide resin shownin Table 1 were obtained by suitable adjustment of the acid/aminecomponent ratio and the polymerization time.

REFERENCE EXAMPLE 2 Synthesis of the Base Film

Using N,N-dimethylacetamide as the solvent, equimolar proportions of3,3′,4,4′-biphenyltetracarboxylic acid dianhydride andp-phenylenediamine were added, and a polyamic acid solution obtained byreaction for about 10 hours. After forming a coated film by casting thissolution on a glass plate, drying was carried out by supplying hot airat 130° C. to the surface for 60 seconds. The film was then separatedaway and a self-supporting film obtained. This film was held in a frameand subjected to heat-treatment at 200° C. to 450° C. and, in this way,there was obtained polyimide films A–H, K and M with properties as shownin Table 3. Table 3 should be read as if it is a continuation of Table 2extending downwards. That is, for example, the base film A, shown in thefirst column of data of Table 3, was formed by the polymerization of thecomposition of Example 1 in Table 2.

Furthermore, pyromellitic acid dianhydride,3,3′,4,4′-biphenyltetracarboxylic acid dianhydride, p-phenylenediamineand 4,4′-diaminodiphenyl ether were added together at a ratio of20/80/50/50 and, by the same procedure, polyimide film L was preparedhaving the properties shown in Table 3.

The other base films described in Table 3 were as follows.

-   I: There was employed Upilex 75S produced by Ube Industries, after    polishing with a grinder to an average thickness of 60 μm.-   J: There was employed Upilex 125S produced by Ube Industries, after    polishing with a grinder to an average thickness of 55 μm.-   N: There was employed Kapton 200EN produced by Toray-DuPont.-   O: There was used 20 μm Micton produced by Toray Industries.-   P: There was used 50 μm BIAC produced by Japan Goretex.-   Q: There was used Upilex 50S produced by Ube Industries.-   R: There was used Kapton 200V produced by Toray-DuPont.-   S: There was used Upilex 75S produced by Ube Industries.

EXAMPLES 1–10, 12, 14–21, COMPARATIVE EXAMPLES 1 AND 2

The polyamide resins prepared in Reference Example 1 and the otherstarting materials shown in Table 1 were dissolved in the proportionsshown in Table 2 in a solvent mixture of methanol/monochlorobenzene at asolids concentration of 20 wt %, and adhesive agent solutions prepared.First of all, the polyamide resin was stirred for 5 hours at 70° C.,then the epoxy resin was added and stirring continued for a further 3hours. Next, the solution temperature was reduced to 30° C. and, whilestirring, the phenolic resin and curing accelerator were added in turnand stirring carried out for 5 hours, to produce the adhesive agentsolution.

Using a bar coater, the adhesive agent solution was applied, so as togive a thickness after drying of about 12 μm, onto polyethyleneterephthalate film (Lumirror, produced by Toray Industries) of thickness25 μm as a protective film, then drying carried out for 1 minute at 100°C. and 5 minutes at 160° C., to prepare adhesive agent sheets I, II, IIIand V. Furthermore, the adhesive agents sheets obtained were laminatedunder conditions of 120° C. and 0.1 MPa to the polyimide films A–H, K, Land M prepared in Reference Example 2, and to aforesaid films N, I, J, Rand S. and also to aramid film O and liquid crystal polymer film P, andadhesive-backed tapes produced. Table 3 show the combinations ofadhesive agent sheet and polyimide film, and the properties of theadhesive-backed tapes obtained. Next, by the methods described inaforesaid Evaluation Methods (11) to (16), patterned tape andsemiconductor device preparation and evaluation were carried out. Theresults are shown in Table 3.

EXAMPLE 11

90 parts of (3-aminopropyl)tetramethyldisiloxane, 10 parts ofp-phenylenediamine and 100 parts of3,3′,4,4′-benzophenonetetracarboxylic acid anhydride were dissolved inN,N-dimethylacetamide, and a polyamic acid solution obtained. Using abar coater, this solution was applied onto the base film shown inExample 1 so as to give a thickness of 8 μm after drying, and thendrying performed at 80–150° C., followed by a 30 minute heat treatmentat 250° C., and the adhesive-backed tape obtained.

As the base film, there was employed the polyimide film A prepared inReference Example 2.

Under conditions of 230° C., 10 N/cm and 1 m/min, 18 μm electrolyticcopper foil (FQ-VLP foil produced by the Mitsui Mining and Smelting Co.)was laminated to this adhesive-backed tape, and then a sequential hotcuring treatment carried out in an inert gas atmosphere oven at 100° C.for 4 hours, 160° C. for 4 hours and 270° C. for 2 hours, and acopper-foil-laminated adhesive-backed tape obtained. Next, by the usualmethods, photoresist film formation, etching, resist removal,electrolytic gold plating and solder-resist film formation were carriedout, and there was produced a semiconductor connecting substrate(patterned tape) of nickel plating thickness 3 μm and gold platingthickness 1 μm (FIG. 1). The properties of the patterned tape are shownin Table 3.

Furthermore, using the patterned tape thus produced, a semiconductordevice for evaluation was obtained in accordance with aforesaidevaluation method (12). The properties of the semiconductor deviceobtained are shown in Table 3.

EXAMPLE 13

40 parts of polyamide resin II prepared in Reference Example 1, 10 partsof bisphenol A type epoxy resin (‘Epikote 828’ produced by Yuka ShellEpoxy), 10 parts of trifunctional bisphenol A type epoxy resin “VG3101”,produced by the Mitsui Chemical Co.), 27 parts of tert-butylphenol resolresin (‘Hitanol 2442’ produced by the Hitachi Chemical Co.) and 15 partsof N,N′-(4,4′-diphenylmethane)bismaleimide were blended, and then mixedand stirred together at 30° C. in a methanol/mono-chlorobenzene mixedsolvent to give a concentration of 20 wt%, and the adhesive agentsolution prepared. Using the method described above, adhesive sheet wasprepared from this adhesive agent solution. Furthermore, using thepolyimide film A prepared in Reference Example 2, an adhesive-backedtape, patterned tape and a semiconductor device were prepared by theaforesaid methods. The properties obtained are shown in Table 3.

EXAMPLES 22–30, COMPARATIVE EXAMPLES 3–7

The polyamide resins prepared in Reference Example 1 and the otherstarting materials indicated in Table 1 were dissolved in theproportions shown in Table 2 in a solvent mixture ofmethanol/monochlorobenzene to give a solids concentration of 20 wt %,and adhesive agent solutions prepared. First of all, the polyamide resinwas stirred for 5 hours at 70° C., then the epoxy resin was added andstirring continued for a further 3 hours. Next, the solution temperaturewas reduced to 30° C. and, while stirring, the phenolic resin and curingaccelerator were added in turn and stirring carried out for 5 hours, toproduce the adhesive agent solution.

Using a bar coater, the adhesive agent solution was applied, so as togive a thickness following drying of about 18 μm, on polyethyleneterephthalate film (Lumirror, produced by Toray Industries) of thickness25 μm as a protective film, then drying carried out for 1 minute at 100°C. and 5 minutes at 160° C., to prepare the adhesive agent sheet.

The adhesive agent sheet obtained was laminated under identicalconditions to the polyimide film A prepared in Reference Example 2, andan adhesive-backed tape produced. The properties of the adhesive-backedtape obtained are shown in Table 3. Next, a patterned tape andsemiconductor device were prepared and evaluated by the aforesaidmethods. The results are shown in Table 3.

From the examples and comparative examples shown in Table 3, it can beseen that in the case of the adhesive-backed tape for semiconductorsobtained in accordance with the present invention there is a reductionin warping after copper foil lamination and circuit pattern formationand, furthermore, both excellent wire bonding and punching propertiesare provided. Again, high dimensional stability and the pull strengthfollowing semiconductor device formation can be maintained at highlevels and, moreover, outstanding solder heat resistance may be said tobe shown.

INDUSTRIAL UTILIZATION POTENTIAL

The present invention offers, on an industrial basis, an adhesive-backedtape suitable for the production of semiconductor devices where there isemployed a film-form adhesive agent such as in the case of the patternedtape used in tape automated bonding (TAB), the semiconductor connectingsubstrate such as an interposer used for a ball grid array (BGA)package, die bonding materials, lead frame fixing tape, LOC tape, theinterlayer adhesive sheets of a multilayer substrate and the like,employed when mounting semiconductor integrated circuits; and to acopper-clad laminate, semiconductor connecting substrate andsemiconductor device employing same. By means of the present inventionthe reliability of semiconductor devices used for high density mountingcan be enhanced.

TABLE 1 Type Product Name Manufacturer Structure Notes Polyamide I acidvalue 1, MWt = 100,000 II Synthesized in Reference acid value 9, MWt =20,000 III Example 1 acid value 20, MWt = 10,000 IV acid value 40, MWt =5,000 Epoxy Resin I Epikote 807 Yuka Shell Epoxy K.K. exopy equivalent170 II Epikote 828 Yuka Shell Epoxy K.K. bisphenol A type epoxy exopyequivalent 186 III Epotohto YDC-1312 Tohto Kasei Co.di-tert-Bu-diglycidylether benzene expoxy exopy equivalent 175 IVEpotohto-ZX-1257 Tohto Kasei Co. dicyclopentadiene epoxy exopyequivalent 257 V EOCN-6000 Nippon Kayaku Co exopy equivalent 205 VIEpikote 152 Yuka Shell Epoxy K.K. phenol novolak type expoxy VII VG3101Mitsui Chemical Co. trifunctional bisphenol A type epoxy Phenolic ResinI CKM1634 Shikoku Chemicals Corp. tert-butylphenol resol II CKM1634GShowa High Polymer Co. tert-butylphenol resol III PS2780 Gun-Ei ChemicalInd. p-tert-butylphenol resol IV PSM4326 Gun-Ei Chemical Ind. novolaktype phenol V PR912 Sumitomo Durez Co. cresol type resol VI PL4414Gun-Ei Chemical Ind. bisphenol A type resol VII H-1 Meiwa Chemical Ind.cresol novolak phenol VIII Hitanol 2442 Hitachi Chemical Co.tert-butylphenol resol Curing Accelerator 2-undecylimidazole

TABLE 2 Examples Adhesive Composition type 1 2 3 4 5 6 7 8 9 10 11 12Polyamide I 30 30 30 30 30 30 30 30 45 35 II 45 III 10 10 10 10 10 10 1010 IV Epoxy Resin I II 0.5 10.0 III 5 5 5 5 5 5 5 5 IV 15 15 15 15 15 1515 15 V VI 10.0 VII Phenolic Resin I 40 40 40 40 40 40 40 40 II 15 III25 IV 10 V 65 VI 15 VII 15 VIII Curing Accelerator 0.3 0.3 0.3 0.3 0.30.3 0.3 0.3 Adhesive Composition 13 14 15 16 17 18 19 20 21 22 23 24Polyamide I 30 30 30 30 30 30 30 30 II 40 III 10 10 10 10 10 10 10 10 40IV 40 Epoxy Resin I II 19.7 19.7 19.7 III 5 5 5 5 5 5 5 5 IV 15 15 15 1515 15 15 15 V VI VII Phenolic Resin I 40 40 40 40 40 40 40 40 40 40 40II III IV V VI VII Curing Accelerator 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.30.3 0.3 0.3 Comp Examples Ex Comparative Examples Adhesive Compositiontype 25 26 27 28 29 30 1 2 3 4 5 6 7 Polyamide I 30 30 30 30 30 30 30 3040 40 30 30 II 10 10 III 10 10 IV 10 10 10 10 10 10 40 Epoxy Resin I19.7 19.7 II 19.7 19.7 19.7 III 19.7 5 5 5 5 IV 19.7 14.7 14.7 14.7 1515 V 5 19.7 VI VII Phenolic Resin I 40 40 40 40 40 40 40 40 40 40 40 4040 II III IV V VI VII VIII Curing Accelerator 0.3 0.3 0.3 0.3 0.3 0.30.3 0.3 0.3 0.3 0.3 0.3 0.3

TABLE 3 Base Film Properties type A B C D E F G H A A A A thickness 5050 50 50 50 50 50 50 50 50 50 50 (μm) coefficient of MD 16 14 12 10 9 2119 16 16 16 16 16 linear TD 21 18 17 17 17 25 23 25 21 21 21 21expansion TD-MD 5 4 5 7 8 4 4 7 5 5 5 5 (ppm/° C.) tensile elas- TD 7.98.0 9.6 7.4 9.4 8.5 8.5 6.5 7.9 7.9 7.9 7.9 tic modulus [MPa] heatshrink- TD 0.01 0.03 0.05 0.05 0.06 0.01 0.00 0.01 0.01 0.01 0.01 0.01age [%] humid coef. TD 8.3 8.5 9.2 9.2 8.5 8.3 8.3 8.5 8.5 8.5 8.5 8.5of exp [ppm/ ° C.] water TD 1.4 1.3 1.4 1.5 1.3 1.3 1.4 1.3 1.4 1.4 1.41.4 absorption [%] thermal 0.28 0.28 0.30 0.26 0.29 0.28 0.30 0.31 0.280.28 0.28 0.28 conductivity [W/m · K] water vapour 0.04 0.05 0.05 0.060.04 0.06 0.05 0.05 0.04 0.04 0.04 0.04 transmittance [g/m2/24 h]Adhesive Agent Props hase 3 3 3 3 3 3 3 3 37 19 10 50 elastic 25° C.1100 1100 1100 1100 1100 1100 1100 1100 300 1050 4000 2500 modulus 110Hz [MPa] 150° C. 135 135 135 135 135 135 135 135 60 10 900 85 110 Hzcoef. linear 105 105 105 105 105 105 105 105 100 110 20 75 expansion[ppm/° C.] Sample Properties copper lami- 2.8 2.5 2.4 2.9 3.0 2.3 2.02.0 3.0 3.0 3.2 2.9 nated war- ping [mm] patterned 1.0 1.5 1.2 1.5 1.51.3 1.0 1.0 1.8 2.1 2.5 1.8 warping [mm] dimensional 0.02 0.05 0.06 0.050.02 0.03 0.03 0.04 0.03 0.05 0.06 0.03 change [%] wire bonding Au wire9.5 9.0 9.0 9.5 8.5 9.0 8.5 8.8 8.0 8.0 9.5 8.0 property diam 0.25 [g]mm (%) Au wire 0.2 0.1 0.2 0.2 0.2 0.1 0.3 0.2 0.6 0.8 0.3 0.6 diam 0.25mm (σ) punchability good good good good good good good good good poorgood poor poor 0/5 0/5 0/5 0/5 0/5 0/5 0/5 0/5 0/5 0/5 0/5 0/5 solderheat resistance Base Film Properties type A I J K L M N O P A A Athickness 50 60 55 50 50 50 50 20 50 50 50 50 (μm) coefficient of MD 1619 19 15 13 21 14 14 16 16 16 16 linear TD 21 22 21 20 18 26 17 17 19 2121 21 expansion TD-MD 5 3 2 5 5 5 3 3 3 5 5 5 (ppm/° C.) tensile elas-TD 7.9 7.1 6.7 9.7 6.0 6.2 6.1 11.0 6.0 7.9 7.9 7.9 tic modulus [MPa]heat shrink- TD 0.01 0.01 0.00 0.25 0.04 0.04 0.09 0.10 0.03 0.01 0.010.01 age [%] humid coef. TD 8.5 8.8 8.8 8.3 15.0 8.9 16.0 10.0 2.0 8.58.5 8.5 of expansion [ppm/° C.] water TD 1.4 1.4 1.5 1.4 1.6 1.4 1.9 0.50.1 1.4 1.4 1.4 absorption [%] thermal 0.28 0.30 0.32 0.27 0.29 0.300.18 0.15 0.65 0.28 0.28 0.28 conductivity [W/m · K] water vapour 0.040.05 0.05 0.04 0.07 0.06 0.73 0.02 0.01 0.04 0.04 0.04 transmittance[g/m2/24 h] Adhesive Agent Properties hase 15 3 3 3 3 3 3 3 3 17 18 18elastic 25° C. 800 1100 1100 1100 1100 1100 1100 1100 1100 950 1050 1000modulus 110 Hz [MPa] 150° C. 15 135 135 135 135 135 135 135 135 90 105125 110 Hz coef linear 250 105 105 105 105 105 105 105 150 100 63 72expansion [ppm/° C.] Sample Properties copper lam- 3.0 2.0 5.0 6.1 3.83.5 4.5 3.5 3.1 2.1 1.6 2.6 inated war- ping [mm] patterned 2.0 0.8 3.04.2 3.5 3.2 4.5 2.5 1.5 1.0 1.2 1.2 warping [mm] dimensional 0.06 0.040.30 0.11 0.08 0.05 0.09 0.05 0.05 0.04 0.03 0.06 change [%] wirebonding Au wire 7.2 9.0 7.6 7.4 9.5 9.0 8.5 8.8 9.3 8.5 10.5 10.0property diam 0.25 [g] mm (%) Au wire 0.7 0.3 0.4 0.5 0.3 0.1 0.1 0.20.2 0.3 0.4 0.3 diam 0.25 mm (σ) punchability good good good good goodgood good good good good good good poor solder 0/5 0/5 0/5 0/5 0/5 0/53/5 3/5 5/5 0/5 0/5 0/5 resistance Base Film Properties type A A A A A AO R O O O O S thickness 50 50 50 50 50 50 50 50 50 50 50 50 75 (μm)coefficient of MD 16 16 16 16 16 16 13 26 13 13 13 13 19 linear TD 21 2121 21 21 21 14 26 14 14 14 14 22 expansion TD-MD 5 5 5 5 5 5 1 0 1 1 1 13 (ppm/° C.) tensile elas- TD 7.9 7.9 7.9 7.9 7.9 7.9 8.6 3.1 8.6 8.68.6 8.6 7.1 tic modulus [MPa] heat shrink- TD 0.01 0.01 0.01 0.01 0.010.01 0.04 0.00 0.04 0.04 0.04 0.04 0.01 age [%] humid coef TD 8.5 8.58.5 8.5 8.5 8.5 8.3 25.0 8.3 8.3 8.3 8.3 8.8 of expan. [ppm/° C.] waterTD 1.4 1.4 1.4 1.4 1.4 1.4 1.6 2.9 1.6 1.6 1.6 1.6 1.4 absorption [%]thermal 0.28 0.28 0.28 0.28 0.28 0.28 0.32 0.18 0.32 0.32 0.32 0.32 0.30conductivity [W/m · K] water vapour 0.04 0.04 0.04 0.04 0.04 0.04 0.041.13 0.04 0.04 0.04 0.04 0.05 trans. [g/m2/24 h] Adhesive Agent Propshase 10 18 0 1 3 6 3 3 38 25 40 30 18 elastic 25° C. 1050 1250 1360 15501200 1000 1100 1100 100 150 300 350 400 modulus 110 Hz [MPa] 150° C. 135137 140 135 131 108 135 135 4 9 22 30 45 110 Hz coef linear 80 65 81 7569 95 105 105 506 320 200 210 103 expansion [ppm/° C.] Sample PropertiesCu laminated 1.9 2.6 2.1 2.0 2.5 2.5 5.0 7.0 6.2 7.4 5.7 7.8 2.0 warping[mm] patterned 1.2 1.5 1.1 1.2 1.6 1.7 4.5 4.5 5.3 6.3 4.5 6.5 1.0warping [mm] dimensional 0.04 0.05 0.02 0.05 0.03 0.07 0.05 0.05 0.200.30 0.15 0.20 0.02 change [%] wire bonding Au wire 11.0 11.5 12.0 10.08.7 9.5 7.0 7.0 2.0 4.5 5.2 5.0 9.0 property diam 0.25 [g] mm (%) Auwire 0.4 0.3 0.3 0.3 0.2 0.3 0.8 1.0 0.5 0.6 0.8 0.7 0.5 diam 3.25 mm(σ) punchability good good good good good good good good poor poor poorgood poor poor solder 0/5 0/5 0/5 0/5 0/5 0/5 1/5 4/5 0/5 1/5 1/5 0/50/5 heat resistance

1. An adhesive-backed tape for semiconductor devices comprising alaminate of an insulating film layer and at least one adhesive agentlayer, wherein the insulating film layer has a coefficient of linearexpansion in the film transverse direction (TD) at 50–200° C. of 17–30ppm/° C. and a tensile modulus of elasticity at room temperature of 6–12GPa and wherein the adhesive agent layer contains epoxy resin and atleast one type of polyamide resin of an acid value of at least
 3. 2. Anadhesive-backed tape for semiconductor devices according to claim 1having a coefficient of linear expansion in the film transversedirection (TD) at 50–200° C. of 19–25 ppm/° C.
 3. An adhesive-backedtape for semiconductor devices according to claim 1 having a tensilemodulus of elasticity at room temperature of 7–10 GPa.
 4. Anadhesive-backed tape for semiconductor devices according to claim 1,wherein the thickness of the insulating film layer is 10–65 μm.
 5. Anadhesive-backed tape for semiconductor devices according to claim 1,wherein the difference in the transverse direction (TD) and machinedirection (MD) coefficients of linear expansion of the insulating filmlayer is 3–10 ppm/° C.
 6. An adhesive-backed tape for semiconductordevices according to claim 1, wherein the humidity coefficient ofexpansion of the insulating film is no more than 23 ppm/% RH.
 7. Anadhesive-backed tape for semiconductor devices according to claim 1,wherein the percentage heat shrinkage of the insulating film layer is0.0% to 0.2%.
 8. An adhesive-backed tape for semiconductor devicesaccording to claim 1, wherein the water absorption of the insulatingfilm layer is no more than 1.7%.
 9. An adhesive-backed tape forsemiconductor devices according to claim 1, wherein the thermalconductivity of the insulating film layer is no more than 0.40 W/m.K.10. An adhesive-backed tape for semiconductor devices according to claim1, wherein the water vapour transmittance of the insulating film layeris at least 0.04 g/m²/24 h by conversion to 1 mm of film thickness. 11.An adhesive-backed tape for semiconductor devices according to claim 1,wherein the chief component of the insulating film layer is a polyimideresin.
 12. An adhesive-backed tape for semiconductor devices accordingto claim 1, wherein the elastic modulus of the adhesive agent layer inthe TD at 150° C. is 1 MPa–5 GPs and the coefficient of linear expansionat 25–150° C. is in the range of 10–500 ppm/° C.
 13. An adhesive-backedtape for semiconductor devices according to claim 1, wherein the haze ofthe adhesive agent layer is no more than
 20. 14. An adhesive-backed tapefor semiconductor devices according to claim 1, wherein the adhesiveagent layer contains at least one type of thermo setting resin selectedfrom the group consisting of epoxy resins, phenolic resins, polyimideresins and maleimide resins and mixtures thereof.
 15. An adhesive-backedtape for semiconductor devices according to claim 1, wherein theadhesive agent layer contains thermosetting resin and at least one typeof thermoplastic resin selected from the group consisting of polyamides,acrylonitrile-butadiene copolymer (NBR), polyesters and polyurethanesand mixtures thereof.
 16. A copper-clad laminate comprising anadhesive-backed tape for semiconductor devices according to claim
 1. 17.A semiconductor device comprising a copper-clad laminate forsemiconductor devices according to claim
 16. 18. A semiconductorconnecting substrate comprising an adhesive-backed tape forsemiconductor devices according to claim
 1. 19. A semiconductor devicecomprising a semiconductor connecting substrate according to claim 18.